Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors
In this work, the correlation between SiO<sub>2</sub> deposition thickness and hydrogen content is discussed and the effect of the SiO<sub>2</sub> layer on the properties of synaptic InGaZnO (IGZO) TFTs is analyzed. Three types of IGZO synaptic thin-film transistors (TFTs) we...
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MDPI AG
2022-04-01
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| author | Shinyoung Park Sangwook Youn Jun Tae Jang Hyungjin Kim Dae Hwan Kim |
| author_facet | Shinyoung Park Sangwook Youn Jun Tae Jang Hyungjin Kim Dae Hwan Kim |
| author_sort | Shinyoung Park |
| collection | DOAJ |
| description | In this work, the correlation between SiO<sub>2</sub> deposition thickness and hydrogen content is discussed and the effect of the SiO<sub>2</sub> layer on the properties of synaptic InGaZnO (IGZO) TFTs is analyzed. Three types of IGZO synaptic thin-film transistors (TFTs) were fabricated with different gate insulators, and the effect of SiO<sub>2</sub> as a gate insulator was investigated. XPS analysis confirmed that the hydrogen content in the Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub> layers increased during SiO<sub>2</sub> deposition step for all depth regions. Hydrogen injected by the SiO<sub>2</sub> layer deposition step was confirmed to improve the memory window through more threshold voltage shift under positive bias stress (PBS) and negative bias stress (NBS) conditions. In addition, the retention characteristics were improved due to the low hydrogen movement velocity in the SiO<sub>2</sub> layer. These results contribute to the optimization of the amount of hydrogen, and the proposed device has potential as a synaptic device capable of neuromorphic computing. |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T03:06:01Z |
| publishDate | 2022-04-01 |
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| spelling | doaj.art-a8a1faa9eca944609a22c587bf441c6c2023-11-23T10:34:09ZengMDPI AGCrystals2073-43522022-04-0112559410.3390/cryst12050594Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film TransistorsShinyoung Park0Sangwook Youn1Jun Tae Jang2Hyungjin Kim3Dae Hwan Kim4School of Electrical Engineering, Circadian ICT Research Center, Kookmin University, Seoul 02707, KoreaDepartment of Electronic Engineering, Inha University, Incheeon 22212, KoreaSchool of Electrical Engineering, Circadian ICT Research Center, Kookmin University, Seoul 02707, KoreaDepartment of Electronic Engineering, Inha University, Incheeon 22212, KoreaSchool of Electrical Engineering, Circadian ICT Research Center, Kookmin University, Seoul 02707, KoreaIn this work, the correlation between SiO<sub>2</sub> deposition thickness and hydrogen content is discussed and the effect of the SiO<sub>2</sub> layer on the properties of synaptic InGaZnO (IGZO) TFTs is analyzed. Three types of IGZO synaptic thin-film transistors (TFTs) were fabricated with different gate insulators, and the effect of SiO<sub>2</sub> as a gate insulator was investigated. XPS analysis confirmed that the hydrogen content in the Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub> layers increased during SiO<sub>2</sub> deposition step for all depth regions. Hydrogen injected by the SiO<sub>2</sub> layer deposition step was confirmed to improve the memory window through more threshold voltage shift under positive bias stress (PBS) and negative bias stress (NBS) conditions. In addition, the retention characteristics were improved due to the low hydrogen movement velocity in the SiO<sub>2</sub> layer. These results contribute to the optimization of the amount of hydrogen, and the proposed device has potential as a synaptic device capable of neuromorphic computing.https://www.mdpi.com/2073-4352/12/5/594synaptic deviceInGaZnO thin-film transistorhydrogenlow-temperature atomic layer depositionXPS |
| spellingShingle | Shinyoung Park Sangwook Youn Jun Tae Jang Hyungjin Kim Dae Hwan Kim Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors Crystals synaptic device InGaZnO thin-film transistor hydrogen low-temperature atomic layer deposition XPS |
| title | Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors |
| title_full | Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors |
| title_fullStr | Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors |
| title_full_unstemmed | Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors |
| title_short | Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors |
| title_sort | effect of hydrogen migration in sio sub 2 sub al sub 2 sub o sub 3 sub stacked gate insulator of ingazno thin film transistors |
| topic | synaptic device InGaZnO thin-film transistor hydrogen low-temperature atomic layer deposition XPS |
| url | https://www.mdpi.com/2073-4352/12/5/594 |
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