Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors

Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors

In this work, the correlation between SiO<sub>2</sub> deposition thickness and hydrogen content is discussed and the effect of the SiO<sub>2</sub> layer on the properties of synaptic InGaZnO (IGZO) TFTs is analyzed. Three types of IGZO synaptic thin-film transistors (TFTs) we...

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Bibliographic Details
Main Authors:	Shinyoung Park, Sangwook Youn, Jun Tae Jang, Hyungjin Kim, Dae Hwan Kim
Format:	Article
Language:	English
Published:	MDPI AG 2022-04-01
Series:	Crystals
Subjects:	synaptic device InGaZnO thin-film transistor hydrogen low-temperature atomic layer deposition XPS
Online Access:	https://www.mdpi.com/2073-4352/12/5/594

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