Carbon Nanotube and Resistive Random Access Memory Based Unbalanced Ternary Logic Gates and Basic Arithmetic Circuits

Carbon Nanotube and Resistive Random Access Memory Based Unbalanced Ternary Logic Gates and Basic Arithmetic Circuits

In this paper, the design of ternary logic gates (standard ternary inverter, ternary NAND, ternary NOR) based on carbon nanotube field effect transistor (CNTFET) and resistive random access memory (RRAM) is proposed. Ternary logic has emerged as a very promising alternative to the existing binary lo...

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Bibliographic Details
Main Authors: Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday, Sohiful Anuar Zainol Murad
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Multiple valued logic (MVL)
ternary logic systems
emerging technologies
carbon nanotube field effect transistor (CNTFET)
resistive random access memory (RRAM)
Online Access:https://ieeexplore.ieee.org/document/9099815/

Internet

https://ieeexplore.ieee.org/document/9099815/

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