Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra

Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra

We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and...

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Dades bibliogràfiques
Autors principals: Fang Cizhe, Liu Yan, Zhang Qingfang, Han Genquan, Gao Xi, Yao Shao, Zhang Jincheng, Hao Yue
Format: Article
Idioma:English
Publicat: Institue of Optics and Electronics, Chinese Academy of Sciences 2018-03-01
Col·lecció:Opto-Electronic Advances
Matèries:
optoelectronics
germanium-tin alloys
mid-infrared spectra
Accés en línia:http://www.oejournal.org/article/doi/10.29026/oea.2018.180004

Internet

http://www.oejournal.org/article/doi/10.29026/oea.2018.180004

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