MOCVD of InGaN on ScAlMgO<sub>4</sub> on Al<sub>2</sub>O<sub>3</sub> Substrates with Improved Surface Morphology and Crystallinity

MOCVD of InGaN on ScAlMgO<sub>4</sub> on Al<sub>2</sub>O<sub>3</sub> Substrates with Improved Surface Morphology and Crystallinity

ScAlMgO<sub>4</sub> (SAM) is a promising substrate material for group III-nitride semiconductors. SAM has a lower lattice mismatch with III-nitride materials compared to conventionally used sapphire (Al<sub>2</sub>O<sub>3</sub>) and silicon substrates. Bulk SAM su...

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Bibliographic Details
Main Authors: Guangying Wang, Yuting Li, Jeremy Kirch, Yizhou Han, Jiahao Chen, Samuel Marks, Swarnav Mukhopadhyay, Rui Liu, Cheng Liu, Paul G. Evans, Shubhra S. Pasayat
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Crystals
Subjects:
MOCVD
epitaxy
III-nitrides
crystallization
InGaN
Online Access:https://www.mdpi.com/2073-4352/13/3/446

Internet

https://www.mdpi.com/2073-4352/13/3/446

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