TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C<sub>3</sub>H<sub>5</sub>-Molecular-Ion-Implanted Silicon Substrate Surface

TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C<sub>3</sub>H<sub>5</sub>-Molecular-Ion-Implanted Silicon Substrate Surface

In this study, we investigate the initial rapid recrystallization of a discretely amorphized C<sub>3</sub>H<sub>5</sub>-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission electron...

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Bibliographic Details
Main Authors: Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Crystals
Subjects:
molecular ion implantation
thermal annealing treatment
solid phase epitaxial growth
Online Access:https://www.mdpi.com/2073-4352/14/2/112

Internet

https://www.mdpi.com/2073-4352/14/2/112

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