Benchmarking Study of Ballistic Current Transport Equations in Symmetric Double-Gate nano-MOSFET by Using Numerical Calculations and Simulation
Five electron transport models for drain current equations of symmetric 10 nm Silicon-based (Si-based) double-gate (DG) nano-MOSFET have been numerically investigated in this paper. All these models are based on ballistic transport flow. The first model, named full ballistic model, assumed no backsc...
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| Format: | Article |
| Language: | English |
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ARQII PUBLICATION
2023-01-01
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| Series: | Applications of Modelling and Simulation |
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| Online Access: | http://arqiipubl.com/ojs/index.php/AMS_Journal/article/view/377/145 |