Atomic scale investigation of silicon nanowires and nanoclusters
<p>Abstract</p> <p>In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and <it>p</it>-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/271 |
| _version_ | 1797721078207873024 |
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| author | Gourbilleau Fabrice Grandidier Bruno Stiévenard Didier Roussel Manuel Chen Wanghua Talbot Etienne Lardé Rodrigue Cadel Emmanuel Pareige Philippe |
| author_facet | Gourbilleau Fabrice Grandidier Bruno Stiévenard Didier Roussel Manuel Chen Wanghua Talbot Etienne Lardé Rodrigue Cadel Emmanuel Pareige Philippe |
| author_sort | Gourbilleau Fabrice |
| collection | DOAJ |
| description | <p>Abstract</p> <p>In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and <it>p</it>-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.</p> |
| first_indexed | 2024-03-12T09:29:27Z |
| format | Article |
| id | doaj.art-a8d2a1cb0d324c9687ff793b315c1388 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:29:27Z |
| publishDate | 2011-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-a8d2a1cb0d324c9687ff793b315c13882023-09-02T13:58:57ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161271Atomic scale investigation of silicon nanowires and nanoclustersGourbilleau FabriceGrandidier BrunoStiévenard DidierRoussel ManuelChen WanghuaTalbot EtienneLardé RodrigueCadel EmmanuelPareige Philippe<p>Abstract</p> <p>In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and <it>p</it>-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.</p>http://www.nanoscalereslett.com/content/6/1/271 |
| spellingShingle | Gourbilleau Fabrice Grandidier Bruno Stiévenard Didier Roussel Manuel Chen Wanghua Talbot Etienne Lardé Rodrigue Cadel Emmanuel Pareige Philippe Atomic scale investigation of silicon nanowires and nanoclusters Nanoscale Research Letters |
| title | Atomic scale investigation of silicon nanowires and nanoclusters |
| title_full | Atomic scale investigation of silicon nanowires and nanoclusters |
| title_fullStr | Atomic scale investigation of silicon nanowires and nanoclusters |
| title_full_unstemmed | Atomic scale investigation of silicon nanowires and nanoclusters |
| title_short | Atomic scale investigation of silicon nanowires and nanoclusters |
| title_sort | atomic scale investigation of silicon nanowires and nanoclusters |
| url | http://www.nanoscalereslett.com/content/6/1/271 |
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