Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs
Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and electronic properties. This work studied the carrier concentration, band structure, overlap of hole and electron wave functions, and polarization field of three-layer staggered QWs in the blue spectr...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0054062 |