Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs

Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs

Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and electronic properties. This work studied the carrier concentration, band structure, overlap of hole and electron wave functions, and polarization field of three-layer staggered QWs in the blue spectr...

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Bibliographic Details
Main Authors: Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun
Format: Article
Language:English
Published: AIP Publishing LLC 2021-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0054062

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