Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma: A Computational Study

Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma: A Computational Study

The continually increasing number of silicon oxide (SiO2) and nitride (Si3N4) layers in 3D-NAND offers both motivations and challenges for developing all-in-one plasma etch solutions for etching SiO2 and Si3N4 at a selectivity near unity while maintaining a high etch rate. This is essential for a si...

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Bibliographic Details
Main Authors: Du Zhang, Yu-Hao Tsai, Hojin Kim, Mingmei Wang
Format: Article
Language:English
Published: JommPublish 2019-03-01
Series:Journal of Microelectronic Manufacturing
Subjects:
3d-nand
oxide
nitride
oxynitride
plasma etch
molecular dynamics
quantum chemistry
Online Access:http://www.jommpublish.org/p/24/#

Internet

http://www.jommpublish.org/p/24/#

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