Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact

Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact

Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO...

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Bibliographic Details
Main Authors: Hongxuan Guo, Jiahao Yao, Siyuan Chen, Chong Qian, Xiangyu Pan, Kuibo Yin, Hao Zhu, Xu Gao, Suidong Wang, Litao Sun
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
aluminum nitride (AlN)
sputtering
aluminum oxide (Al<sub>2</sub>O<sub>3</sub>)
memristor
resistive random access memory (RRAM)
conductive filaments (CFs)
Online Access:https://www.mdpi.com/2072-666X/15/12/1499

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https://www.mdpi.com/2072-666X/15/12/1499

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