Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA–15) probe with the final objective to sense thrombin by electrical detection. In this work, the impact of the biomodification on the electr...

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Bibliographic Details
Main Authors: Monica Vallejo-Perez, Céline Ternon, Nicolas Spinelli, Fanny Morisot, Christoforos Theodorou, Ganesh Jayakumar, Per-Erik Hellström, Mireille Mouis, Laetitia Rapenne, Xavier Mescot, Bassem Salem, Valérie Stambouli
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Nanomaterials
Subjects:
silicon nanowires
nanonet
field effect transistors
GOPS-based functionalization
UV-assisted functionalization
aptamer grafting
Online Access:https://www.mdpi.com/2079-4991/10/9/1842

Internet

https://www.mdpi.com/2079-4991/10/9/1842

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