Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection
Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA–15) probe with the final objective to sense thrombin by electrical detection. In this work, the impact of the biomodification on the electr...
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| Format: | Article |
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MDPI AG
2020-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/9/1842 |
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| author | Monica Vallejo-Perez Céline Ternon Nicolas Spinelli Fanny Morisot Christoforos Theodorou Ganesh Jayakumar Per-Erik Hellström Mireille Mouis Laetitia Rapenne Xavier Mescot Bassem Salem Valérie Stambouli |
| author_facet | Monica Vallejo-Perez Céline Ternon Nicolas Spinelli Fanny Morisot Christoforos Theodorou Ganesh Jayakumar Per-Erik Hellström Mireille Mouis Laetitia Rapenne Xavier Mescot Bassem Salem Valérie Stambouli |
| author_sort | Monica Vallejo-Perez |
| collection | DOAJ |
| description | Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA–15) probe with the final objective to sense thrombin by electrical detection. In this work, the impact of the biomodification on the electrical properties of the Si NN–FETs was studied. First, the results that were obtained for the optimization of the (3-Glycidyloxypropyl)trimethoxysilane (GOPS)-based biofunctionalization process by using UV radiation are reported. The biofunctionalized devices were analyzed by atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM), proving that TBA–15 probes were properly grafted on the surface of the devices, and by means of epifluorescence microscopy it was possible to demonstrate that the UV-assisted GOPS-based functionalization notably improves the homogeneity of the surface DNA distribution. Later, the electrical characteristics of 80 devices were analyzed before and after the biofunctionalization process, indicating that the results are highly dependent on the experimental protocol. We found that the TBA–15 hybridization capacity with its complementary strand is time dependent and that the transfer characteristics of the Si NN–FETs obtained after the TBA–15 probe grafting are also time dependent. These results help to elucidate and define the experimental precautions that must be taken into account to fabricate reproducible devices. |
| first_indexed | 2024-03-10T16:18:52Z |
| format | Article |
| id | doaj.art-a977d19b412243b3ac3da0aa47b82e27 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T16:18:52Z |
| publishDate | 2020-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-a977d19b412243b3ac3da0aa47b82e272023-11-20T13:49:32ZengMDPI AGNanomaterials2079-49912020-09-01109184210.3390/nano10091842Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical DetectionMonica Vallejo-Perez0Céline Ternon1Nicolas Spinelli2Fanny Morisot3Christoforos Theodorou4Ganesh Jayakumar5Per-Erik Hellström6Mireille Mouis7Laetitia Rapenne8Xavier Mescot9Bassem Salem10Valérie Stambouli11University Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, DCM UMR 5250, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, FranceUniversity Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, FranceKTH Royal Institute of Technology, Department of Electronics, School of Electrical Engineering and Computer Science, Electrum 229, SE-164 40 Kista, SwedenKTH Royal Institute of Technology, Department of Electronics, School of Electrical Engineering and Computer Science, Electrum 229, SE-164 40 Kista, SwedenUniversity Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, FranceUniversity Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, FranceUniversity Grenoble Alpes, CNRS, CEA/LETI Minatec, Grenoble INP, LTM, F-38054 Grenoble, FranceUniversity Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, FranceField effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA–15) probe with the final objective to sense thrombin by electrical detection. In this work, the impact of the biomodification on the electrical properties of the Si NN–FETs was studied. First, the results that were obtained for the optimization of the (3-Glycidyloxypropyl)trimethoxysilane (GOPS)-based biofunctionalization process by using UV radiation are reported. The biofunctionalized devices were analyzed by atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM), proving that TBA–15 probes were properly grafted on the surface of the devices, and by means of epifluorescence microscopy it was possible to demonstrate that the UV-assisted GOPS-based functionalization notably improves the homogeneity of the surface DNA distribution. Later, the electrical characteristics of 80 devices were analyzed before and after the biofunctionalization process, indicating that the results are highly dependent on the experimental protocol. We found that the TBA–15 hybridization capacity with its complementary strand is time dependent and that the transfer characteristics of the Si NN–FETs obtained after the TBA–15 probe grafting are also time dependent. These results help to elucidate and define the experimental precautions that must be taken into account to fabricate reproducible devices.https://www.mdpi.com/2079-4991/10/9/1842silicon nanowiresnanonetfield effect transistorsGOPS-based functionalizationUV-assisted functionalizationaptamer grafting |
| spellingShingle | Monica Vallejo-Perez Céline Ternon Nicolas Spinelli Fanny Morisot Christoforos Theodorou Ganesh Jayakumar Per-Erik Hellström Mireille Mouis Laetitia Rapenne Xavier Mescot Bassem Salem Valérie Stambouli Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection Nanomaterials silicon nanowires nanonet field effect transistors GOPS-based functionalization UV-assisted functionalization aptamer grafting |
| title | Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection |
| title_full | Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection |
| title_fullStr | Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection |
| title_full_unstemmed | Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection |
| title_short | Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection |
| title_sort | optimization of gops based functionalization process and impact of aptamer grafting on the si nanonet fet electrical properties as first steps towards thrombin electrical detection |
| topic | silicon nanowires nanonet field effect transistors GOPS-based functionalization UV-assisted functionalization aptamer grafting |
| url | https://www.mdpi.com/2079-4991/10/9/1842 |
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