Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD
<p>This study made an attempt to understand and control the heteroepitaxial growth of GaN from the view of the essential behaviors of crystal growth. Through a comparison of the nonpolar, polar and semipolar GaN epitaxial film, the influence of lateral growth on the surface pit formation mecha...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Kaunas University of Technology
2016-05-01
|
| Series: | Medžiagotyra |
| Subjects: | |
| Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/12931 |