Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD
<p>This study made an attempt to understand and control the heteroepitaxial growth of GaN from the view of the essential behaviors of crystal growth. Through a comparison of the nonpolar, polar and semipolar GaN epitaxial film, the influence of lateral growth on the surface pit formation mecha...
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| Format: | Article |
| Language: | English |
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Kaunas University of Technology
2016-05-01
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| Series: | Medžiagotyra |
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| Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/12931 |
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| author | Zhiyuan GAO Xiaowei XUE Huimin LI Jiangjiang LI Li MA Wenrong WU Deshu ZOU |
| author_facet | Zhiyuan GAO Xiaowei XUE Huimin LI Jiangjiang LI Li MA Wenrong WU Deshu ZOU |
| author_sort | Zhiyuan GAO |
| collection | DOAJ |
| description | <p>This study made an attempt to understand and control the heteroepitaxial growth of GaN from the view of the essential behaviors of crystal growth. Through a comparison of the nonpolar, polar and semipolar GaN epitaxial film, the influence of lateral growth on the surface pit formation mechanism has been investigated. For a-plane GaN, the lateral growth velocities of the less inclined {20-21} and {11-22} facets are approaching to the velocity of {10-11} facet under high temperature, so that the surface pit was transformed from a triangular shape to a pentagonal one. For c-plane GaN, the size of the surface pit produced by screw dislocation is determined by the lateral growth of the pit facets. A slow lateral growth rate of the inclined facets {10-11} compared with the vertical growth rate of (0001) facet under low V/III ratio would enlarge the pit size. For (11-22) semipolar GaN, surface pit is rarely observed, because the vertical growth velocity of {11-22} plane is slow compared with the lateral growth rate of the inclined facets, such as {11-20} and (0001).</p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.22.2.12931">http://dx.doi.org/10.5755/j01.ms.22.2.12931</a></p> |
| first_indexed | 2024-12-11T09:18:48Z |
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| id | doaj.art-a97995613d0b45a093bbdfad3802045f |
| institution | Directory Open Access Journal |
| issn | 1392-1320 2029-7289 |
| language | English |
| last_indexed | 2024-12-11T09:18:48Z |
| publishDate | 2016-05-01 |
| publisher | Kaunas University of Technology |
| record_format | Article |
| series | Medžiagotyra |
| spelling | doaj.art-a97995613d0b45a093bbdfad3802045f2022-12-22T01:13:18ZengKaunas University of TechnologyMedžiagotyra1392-13202029-72892016-05-0122222322710.5755/j01.ms.22.2.129316965Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVDZhiyuan GAOXiaowei XUEHuimin LIJiangjiang LILi MAWenrong WUDeshu ZOU<p>This study made an attempt to understand and control the heteroepitaxial growth of GaN from the view of the essential behaviors of crystal growth. Through a comparison of the nonpolar, polar and semipolar GaN epitaxial film, the influence of lateral growth on the surface pit formation mechanism has been investigated. For a-plane GaN, the lateral growth velocities of the less inclined {20-21} and {11-22} facets are approaching to the velocity of {10-11} facet under high temperature, so that the surface pit was transformed from a triangular shape to a pentagonal one. For c-plane GaN, the size of the surface pit produced by screw dislocation is determined by the lateral growth of the pit facets. A slow lateral growth rate of the inclined facets {10-11} compared with the vertical growth rate of (0001) facet under low V/III ratio would enlarge the pit size. For (11-22) semipolar GaN, surface pit is rarely observed, because the vertical growth velocity of {11-22} plane is slow compared with the lateral growth rate of the inclined facets, such as {11-20} and (0001).</p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.22.2.12931">http://dx.doi.org/10.5755/j01.ms.22.2.12931</a></p>http://matsc.ktu.lt/index.php/MatSc/article/view/12931a-plane GaN, c-plane GaN, (11-22) semipolar GaN, surface pit, lateral growth |
| spellingShingle | Zhiyuan GAO Xiaowei XUE Huimin LI Jiangjiang LI Li MA Wenrong WU Deshu ZOU Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD Medžiagotyra a-plane GaN, c-plane GaN, (11-22) semipolar GaN, surface pit, lateral growth |
| title | Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD |
| title_full | Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD |
| title_fullStr | Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD |
| title_full_unstemmed | Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD |
| title_short | Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD |
| title_sort | influence of lateral growth on the surface pit formation of gan heteroepitaxial film grown by mocvd |
| topic | a-plane GaN, c-plane GaN, (11-22) semipolar GaN, surface pit, lateral growth |
| url | http://matsc.ktu.lt/index.php/MatSc/article/view/12931 |
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