Three-Dimensional Lattice Structure to Reduce Parasitic Inductance for WBG Power Semiconductor-Based Converters

Wide bandgap (WBG) power semiconductors can achieve high efficiency and power density due to their low on-resistance and fast switching speeds. However, the fast-switching speed induces voltage to the parasitic inductance in the circuit, causing a significant overshoot in the drain-source voltage of...

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Bibliographic Details
Main Authors: Sung-Soo Min, Chan-Hyeok Eom, Yeong-Seop Jang, Rae-Young Kim
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/12/8/1779