An Amorphous Native Oxide Shell for High Bias‐Stress Stability Nanowire Synaptic Transistor

An Amorphous Native Oxide Shell for High Bias‐Stress Stability Nanowire Synaptic Transistor

Abstract The inhomogeneous native oxide shells on the surfaces of III–V group semiconductors typically yield inferior and unstable electrical properties metrics, challenging the development of next‐generation integrated circuits. Herein, the native GaOx shells are profitably utilized by a simple in‐...

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Bibliographic Details
Main Authors: Xinming Zhuang, Zixu Sa, Jie Zhang, Mingxu Wang, Mingsheng Xu, Fengjing Liu, Kepeng Song, Tao He, Feng Chen, Zai‐xing Yang
Format: Article
Language:English
Published: Wiley 2023-11-01
Series:Advanced Science
Subjects:
bias‐stress stability
field‐effect‐transistors
GaSb nanowires
native oxide shells
synaptic transistors
Online Access:https://doi.org/10.1002/advs.202302516

Internet

https://doi.org/10.1002/advs.202302516

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