Characterization of nanoscale atomic motion of Si in polycrystalline Cu layer
Atomic migration of silicon through grain boundaries of a thin polycrystalline Cu film and island formation on the Cu surface were studied in the temperature range of 403–520 K. Samples used in these experiments was prepared on Si(111) wafers by room temperature magnetron sputtering and they consist...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-02-01
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| Series: | Heliyon |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844024015470 |