Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices
Self-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell. Such a simple structure can be applied for the vertical resistive memory. Both top and bottom interface betw...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Polish Academy of Sciences
2024-06-01
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| Series: | Archives of Metallurgy and Materials |
| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/131844/AMM-2024-2-15-Byung%20Joon%20Choi.pdf |