Radiation-sensitive field effect transistor response to gamma-ray irradiation
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated. It has been shown that for the gate bias during the irradiation of 5 V and 10 V...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
VINCA Institute of Nuclear Sciences
2011-01-01
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| Series: | Nuclear Technology and Radiation Protection |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-3994/2011/1451-39941101025P.pdf |