An Efficient Design of TaOx‐Based Memristor by Inserting an Ultrathin Al2O3 Layer with High Stability for Neuromorphic Computing and Logic Operation
Abstract New computing‐in‐memory architecture based on memristors can achieve in situ storage and computing of data, which greatly improves the computing efficiency of the hardware system. Here, a reliable bilayer structured TaOx/Al2O3 memristor with a 2 nm Al2O3 insertion layer is demonstrated. Thi...
Main Authors: | , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2023-05-01
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Series: | Advanced Physics Research |
Subjects: | |
Online Access: | https://doi.org/10.1002/apxr.202200086 |