Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges

The impact of oxide charges on the metal-insulator-semiconductor (MIS) device&#x2019;s capacitance <inline-formula> <tex-math notation="LaTeX">$({C})$ </tex-math></inline-formula> and conductance <inline-formula> <tex-math notation="LaTeX">...

Full description

Bibliographic Details
Main Authors: Kung-Chu Chen, Kuan-Wun Lin, Sung-Wei Huang, Jian-Yu Lin, Jenn-Gwo Hwu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9924232/