Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges
The impact of oxide charges on the metal-insulator-semiconductor (MIS) device’s capacitance <inline-formula> <tex-math notation="LaTeX">$({C})$ </tex-math></inline-formula> and conductance <inline-formula> <tex-math notation="LaTeX">...
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9924232/ |
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| author | Kung-Chu Chen Kuan-Wun Lin Sung-Wei Huang Jian-Yu Lin Jenn-Gwo Hwu |
| author_facet | Kung-Chu Chen Kuan-Wun Lin Sung-Wei Huang Jian-Yu Lin Jenn-Gwo Hwu |
| author_sort | Kung-Chu Chen |
| collection | DOAJ |
| description | The impact of oxide charges on the metal-insulator-semiconductor (MIS) device’s capacitance <inline-formula> <tex-math notation="LaTeX">$({C})$ </tex-math></inline-formula> and conductance <inline-formula> <tex-math notation="LaTeX">$({G})$ </tex-math></inline-formula> was studied in this work. A model to calculate MIS device’s <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${G}$ </tex-math></inline-formula> under the considerations of oxide charges, doping concentration, device dimension, and AC signal frequency <inline-formula> <tex-math notation="LaTeX">$(\omega)$ </tex-math></inline-formula> was proposed. A relation of <inline-formula> <tex-math notation="LaTeX">${C}-{C}_{\textrm {D}}\propto \omega ^{-0.5}$ </tex-math></inline-formula> was found, where <inline-formula> <tex-math notation="LaTeX">${C}_{\textrm {D}}$ </tex-math></inline-formula> is the depletion capacitance under the electrode. The relation is examined by the experimental and the TCAD simulation. The capacitance of a MIS device with oxide charges can be calculated according to the proposed model and is well-matched with the TCAD simulation under light to moderate doping concentration. For heavily doped substrates, the modeling deviates from the simulation results because of quantum confinement and concentration-dependent mobility. However, the trend of the capacitance value is still able to be estimated by our modeling. From the modeling, it was found that for <inline-formula> <tex-math notation="LaTeX">$Q_{\textrm {ox}}/\textrm {q}=7.5\times 10^{10} \textrm {cm}^{\textrm {-2}}$ </tex-math></inline-formula>, the MIS capacitor with substrate doping concentration <inline-formula> <tex-math notation="LaTeX">$N_{\textrm {A}}=1\times 10^{15} \textrm {cm}^{\textrm {-3}}$ </tex-math></inline-formula> exhibits a long lateral AC signal decay length of <inline-formula> <tex-math notation="LaTeX">$52~\mu \text{m}$ </tex-math></inline-formula> at 1 kHz under the inversion region. The findings of this work are fundamental and are helpful for device engineering. |
| first_indexed | 2024-04-12T01:13:37Z |
| format | Article |
| id | doaj.art-a9e9557c3c4b4e2caba711884291f0ae |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-12T01:13:37Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-a9e9557c3c4b4e2caba711884291f0ae2022-12-22T03:54:02ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011096096910.1109/JEDS.2022.32157719924232Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide ChargesKung-Chu Chen0https://orcid.org/0000-0003-0816-9399Kuan-Wun Lin1https://orcid.org/0000-0002-2105-7407Sung-Wei Huang2https://orcid.org/0000-0003-4417-2835Jian-Yu Lin3https://orcid.org/0000-0002-8800-8714Jenn-Gwo Hwu4https://orcid.org/0000-0001-9688-0812Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanThe impact of oxide charges on the metal-insulator-semiconductor (MIS) device’s capacitance <inline-formula> <tex-math notation="LaTeX">$({C})$ </tex-math></inline-formula> and conductance <inline-formula> <tex-math notation="LaTeX">$({G})$ </tex-math></inline-formula> was studied in this work. A model to calculate MIS device’s <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${G}$ </tex-math></inline-formula> under the considerations of oxide charges, doping concentration, device dimension, and AC signal frequency <inline-formula> <tex-math notation="LaTeX">$(\omega)$ </tex-math></inline-formula> was proposed. A relation of <inline-formula> <tex-math notation="LaTeX">${C}-{C}_{\textrm {D}}\propto \omega ^{-0.5}$ </tex-math></inline-formula> was found, where <inline-formula> <tex-math notation="LaTeX">${C}_{\textrm {D}}$ </tex-math></inline-formula> is the depletion capacitance under the electrode. The relation is examined by the experimental and the TCAD simulation. The capacitance of a MIS device with oxide charges can be calculated according to the proposed model and is well-matched with the TCAD simulation under light to moderate doping concentration. For heavily doped substrates, the modeling deviates from the simulation results because of quantum confinement and concentration-dependent mobility. However, the trend of the capacitance value is still able to be estimated by our modeling. From the modeling, it was found that for <inline-formula> <tex-math notation="LaTeX">$Q_{\textrm {ox}}/\textrm {q}=7.5\times 10^{10} \textrm {cm}^{\textrm {-2}}$ </tex-math></inline-formula>, the MIS capacitor with substrate doping concentration <inline-formula> <tex-math notation="LaTeX">$N_{\textrm {A}}=1\times 10^{15} \textrm {cm}^{\textrm {-3}}$ </tex-math></inline-formula> exhibits a long lateral AC signal decay length of <inline-formula> <tex-math notation="LaTeX">$52~\mu \text{m}$ </tex-math></inline-formula> at 1 kHz under the inversion region. The findings of this work are fundamental and are helpful for device engineering.https://ieeexplore.ieee.org/document/9924232/metal-insulator-semiconductor (MIS)oxide charges |
| spellingShingle | Kung-Chu Chen Kuan-Wun Lin Sung-Wei Huang Jian-Yu Lin Jenn-Gwo Hwu Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges IEEE Journal of the Electron Devices Society metal-insulator-semiconductor (MIS) oxide charges |
| title | Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges |
| title_full | Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges |
| title_fullStr | Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges |
| title_full_unstemmed | Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges |
| title_short | Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges |
| title_sort | comprehensive study of inversion capacitance in metal insulator semiconductor capacitor with existing oxide charges |
| topic | metal-insulator-semiconductor (MIS) oxide charges |
| url | https://ieeexplore.ieee.org/document/9924232/ |
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