Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges
The impact of oxide charges on the metal-insulator-semiconductor (MIS) device’s capacitance <inline-formula> <tex-math notation="LaTeX">$({C})$ </tex-math></inline-formula> and conductance <inline-formula> <tex-math notation="LaTeX">...
Main Authors: | Kung-Chu Chen, Kuan-Wun Lin, Sung-Wei Huang, Jian-Yu Lin, Jenn-Gwo Hwu |
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Format: | Article |
Language: | English |
Published: |
IEEE
2022-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9924232/ |
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