Metal-induced lateral crystallization of germanium thin films
Recent advances in polycrystalline Ge layers formed through solid-phase crystallization have demonstrated carrier mobilities superior to those of single-crystal Si. In this study, we thoroughly examined the phenomenon of metal-induced lateral crystallization in Ge, a topic that had garnered signific...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-08-01
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| Series: | Materials & Design |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127523005312 |