High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors
Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently a lack of high-performance edge-contact devic...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Association for the Advancement of Science (AAAS)
2025-01-01
|
| Series: | Research |
| Online Access: | https://spj.science.org/doi/10.34133/research.0593 |