Skip to content
VuFind
    • English
    • Deutsch
    • Español
    • Français
    • Italiano
    • 日本語
    • Nederlands
    • Português
    • Português (Brasil)
    • 中文(简体)
    • 中文(繁體)
    • Türkçe
    • עברית
    • Gaeilge
    • Cymraeg
    • Ελληνικά
    • Català
    • Euskara
    • Русский
    • Čeština
    • Suomi
    • Svenska
    • polski
    • Dansk
    • slovenščina
    • اللغة العربية
    • বাংলা
    • Galego
    • Tiếng Việt
    • Hrvatski
    • हिंदी
    • Հայերէն
    • Українська
    • Sámegiella
    • Монгол
Advanced
  • Investigation of composition a...
  • Cite this
  • Text this
  • Email this
  • Print
  • Export Record
    • Export to RefWorks
    • Export to EndNoteWeb
    • Export to EndNote
  • Permanent link
Investigation of composition and origin of the intermediate layers at the Ga2O3/AlN and Ga2O3/Al2O3 interfaces

Investigation of composition and origin of the intermediate layers at the Ga2O3/AlN and Ga2O3/Al2O3 interfaces

Bibliographic Details
Main Authors: Schowalter Marco, Raghuvansy S., Karg A., Vogt P., Schlom D., Jena D., Eickhoff M., Rosenauer A.
Format: Article
Language:English
Published: EDP Sciences 2024-01-01
Series:BIO Web of Conferences
Subjects:
composition determination
dft
ga2o3
Online Access:https://www.bio-conferences.org/articles/bioconf/pdf/2024/48/bioconf_emc2024_24042.pdf
  • Holdings
  • Description
  • Similar Items
  • Staff View

Internet

https://www.bio-conferences.org/articles/bioconf/pdf/2024/48/bioconf_emc2024_24042.pdf

Similar Items

  • Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy
    by: Sushma Raghuvansy, et al.
    Published: (2023-11-01)
  • Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]
    by: Sushma Raghuvansy, et al.
    Published: (2024-01-01)
  • Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface
    by: M. Schowalter, et al.
    Published: (2024-09-01)
  • Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy
    by: Martin S. Williams, et al.
    Published: (2024-01-01)
  • Effect of Ga2O3 addition on the properties of Y2O3-doped AlN ceramics
    by: Shin H., et al.
    Published: (2015-01-01)

Search Options

  • Search History
  • Advanced Search

Find More

  • Browse the Catalog
  • Browse Alphabetically
  • Explore Channels
  • Course Reserves
  • New Items

Need Help?

  • Search Tips
  • Ask a Librarian
  • FAQs