Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCA...

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Detalles Bibliográficos
Autores principales: Peiran Wang, Chenkai Deng, Hongyu Cheng, Weichih Cheng, Fangzhou Du, Chuying Tang, Chunqi Geng, Nick Tao, Qing Wang, Hongyu Yu
Formato: Artículo
Lenguaje:English
Publicado: MDPI AG 2023-01-01
Colección:Crystals
Materias:
AlGaN/GaN high-electron mobility transistors (HEMTs)
floating field plate (FFP)
breakdown voltage
current collapse
frequency response
TCAD
Acceso en línea:https://www.mdpi.com/2073-4352/13/1/110

Internet

https://www.mdpi.com/2073-4352/13/1/110

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