Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain curr...

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Bibliographic Details
Main Authors: Soo Cheol Kang, So Young Kim, Sang Kyung Lee, Kiyung Kim, Billal Allouche, Hyeon Jun Hwang, Byoung Hun Lee
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Nanomaterials
Subjects:
ZnO thin-film transistors
oxygen vacancy
vacuum treatment
oxygen annealing
trap-induced Schottky barrier lowering
Online Access:https://www.mdpi.com/2079-4991/10/6/1186

Internet

https://www.mdpi.com/2079-4991/10/6/1186

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