Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors
The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain curr...
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| Format: | Article |
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MDPI AG
2020-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/6/1186 |
| _version_ | 1797564899808772096 |
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| author | Soo Cheol Kang So Young Kim Sang Kyung Lee Kiyung Kim Billal Allouche Hyeon Jun Hwang Byoung Hun Lee |
| author_facet | Soo Cheol Kang So Young Kim Sang Kyung Lee Kiyung Kim Billal Allouche Hyeon Jun Hwang Byoung Hun Lee |
| author_sort | Soo Cheol Kang |
| collection | DOAJ |
| description | The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (I<sub>D</sub>) via trap-assisted tunneling when the gate voltage (V<sub>G</sub>) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m<sup>2</sup> V<sup>−1</sup>·s<sup>−1</sup> to 8.9 m<sup>2</sup> V<sup>−1</sup>·s<sup>−1</sup> and on-current increased by ~13%. |
| first_indexed | 2024-03-10T19:03:26Z |
| format | Article |
| id | doaj.art-aa707325e2a841a88c3191664614b8df |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T19:03:26Z |
| publishDate | 2020-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-aa707325e2a841a88c3191664614b8df2023-11-20T04:15:52ZengMDPI AGNanomaterials2079-49912020-06-01106118610.3390/nano10061186Channel Defect Profiling and Passivation for ZnO Thin-Film TransistorsSoo Cheol Kang0So Young Kim1Sang Kyung Lee2Kiyung Kim3Billal Allouche4Hyeon Jun Hwang5Byoung Hun Lee6Center for Emerging Electronic Devices and Systems (CEEDS), Gwangju 61005, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju 61005, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju 61005, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju 61005, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju 61005, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju 61005, KoreaCenter for Emerging Electronic Devices and Systems (CEEDS), Gwangju 61005, KoreaThe electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (I<sub>D</sub>) via trap-assisted tunneling when the gate voltage (V<sub>G</sub>) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m<sup>2</sup> V<sup>−1</sup>·s<sup>−1</sup> to 8.9 m<sup>2</sup> V<sup>−1</sup>·s<sup>−1</sup> and on-current increased by ~13%.https://www.mdpi.com/2079-4991/10/6/1186ZnO thin-film transistorsoxygen vacancyvacuum treatmentoxygen annealingtrap-induced Schottky barrier lowering |
| spellingShingle | Soo Cheol Kang So Young Kim Sang Kyung Lee Kiyung Kim Billal Allouche Hyeon Jun Hwang Byoung Hun Lee Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors Nanomaterials ZnO thin-film transistors oxygen vacancy vacuum treatment oxygen annealing trap-induced Schottky barrier lowering |
| title | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
| title_full | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
| title_fullStr | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
| title_full_unstemmed | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
| title_short | Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors |
| title_sort | channel defect profiling and passivation for zno thin film transistors |
| topic | ZnO thin-film transistors oxygen vacancy vacuum treatment oxygen annealing trap-induced Schottky barrier lowering |
| url | https://www.mdpi.com/2079-4991/10/6/1186 |
| work_keys_str_mv | AT soocheolkang channeldefectprofilingandpassivationforznothinfilmtransistors AT soyoungkim channeldefectprofilingandpassivationforznothinfilmtransistors AT sangkyunglee channeldefectprofilingandpassivationforznothinfilmtransistors AT kiyungkim channeldefectprofilingandpassivationforznothinfilmtransistors AT billalallouche channeldefectprofilingandpassivationforznothinfilmtransistors AT hyeonjunhwang channeldefectprofilingandpassivationforznothinfilmtransistors AT byounghunlee channeldefectprofilingandpassivationforznothinfilmtransistors |