Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Nanolaminated Stacks

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Nanolaminated Stacks

The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells will be needed and adopted. In the meantime, th...

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Bibliographic Details
Main Authors: Dencho Spassov, Albena Paskaleva
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Nanomaterials
Subjects:
charge trapping flash memory
HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> stacks
non-volatile memory
atomic layer deposition (ALD)
high-k dielectrics
Online Access:https://www.mdpi.com/2079-4991/13/17/2456

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https://www.mdpi.com/2079-4991/13/17/2456

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