Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Abstract Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed...

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Bibliographic Details
Main Authors: Ting Zhang, Bohan Liu, Waseem Ahmad, Yaoyu Xuan, Xiangxiao Ying, Zhijun Liu, Zhi Chen, Shibin Li
Format: Article
Language:English
Published: SpringerOpen 2017-09-01
Series:Nanoscale Research Letters
Subjects:
Ion-implantation
Hyperdoped silicon
NIR photoresponse
Online Access:http://link.springer.com/article/10.1186/s11671-017-2287-2

Internet

http://link.springer.com/article/10.1186/s11671-017-2287-2

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