MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg<sub>0.03</sub>Zn<sub>0.97</sub>O (MZO) semiconductor served as the channel layer and ferroelectric Ni<sub>0.02</sub>Mg<sub&g...

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Bibliographic Details
Main Authors: Fangzhou Yu, Wen-Chiang Hong, Guangyuan Li, Yuxuan Li, Ming Lu, Yicheng Lu
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Negative capacitance
transparent electronics
thin-film transistor
subthreshold swing
Online Access:https://ieeexplore.ieee.org/document/9525131/

Internet

https://ieeexplore.ieee.org/document/9525131/

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