MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass
We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg<sub>0.03</sub>Zn<sub>0.97</sub>O (MZO) semiconductor served as the channel layer and ferroelectric Ni<sub>0.02</sub>Mg<sub&g...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9525131/ |
| _version_ | 1819129422162165760 |
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| author | Fangzhou Yu Wen-Chiang Hong Guangyuan Li Yuxuan Li Ming Lu Yicheng Lu |
| author_facet | Fangzhou Yu Wen-Chiang Hong Guangyuan Li Yuxuan Li Ming Lu Yicheng Lu |
| author_sort | Fangzhou Yu |
| collection | DOAJ |
| description | We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg<sub>0.03</sub>Zn<sub>0.97</sub>O (MZO) semiconductor served as the channel layer and ferroelectric Ni<sub>0.02</sub>Mg<sub>0.15</sub>Zn<sub>0.83</sub>O (NMZO) serves in the gate stack. The Al-doped ZnO (AZO) is employed as the transparent conductive oxide (TCO) for source and drain electrodes. The NC-TTFT on glass shows an average optical transmittance of 91 % in the visible spectrum. The subthreshold swing (SS) value is significantly reduced over the reference transparent thin-film transistor (TTFT) without a ferroelectric layer. The minimum SS value of the NC-TTFT reaches 17 mV/dec. With normally-off operation and high on/off current ratio of 107, this NC-TTFT on glass technology shows promising potential for wearable systems such as augmented reality (AR) smart glasses. |
| first_indexed | 2024-12-22T08:43:28Z |
| format | Article |
| id | doaj.art-ab502da8299c4096b13ccf045bb81724 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-22T08:43:28Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-ab502da8299c4096b13ccf045bb817242022-12-21T18:32:11ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01979880310.1109/JEDS.2021.31089049525131MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on GlassFangzhou Yu0https://orcid.org/0000-0003-4894-2999Wen-Chiang Hong1Guangyuan Li2https://orcid.org/0000-0002-9299-6065Yuxuan Li3https://orcid.org/0000-0003-2596-9646Ming Lu4Yicheng Lu5Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USADepartment of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USADepartment of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USADepartment of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USACenter for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USADepartment of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USAWe demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg<sub>0.03</sub>Zn<sub>0.97</sub>O (MZO) semiconductor served as the channel layer and ferroelectric Ni<sub>0.02</sub>Mg<sub>0.15</sub>Zn<sub>0.83</sub>O (NMZO) serves in the gate stack. The Al-doped ZnO (AZO) is employed as the transparent conductive oxide (TCO) for source and drain electrodes. The NC-TTFT on glass shows an average optical transmittance of 91 % in the visible spectrum. The subthreshold swing (SS) value is significantly reduced over the reference transparent thin-film transistor (TTFT) without a ferroelectric layer. The minimum SS value of the NC-TTFT reaches 17 mV/dec. With normally-off operation and high on/off current ratio of 107, this NC-TTFT on glass technology shows promising potential for wearable systems such as augmented reality (AR) smart glasses.https://ieeexplore.ieee.org/document/9525131/Negative capacitancetransparent electronicsthin-film transistorsubthreshold swing |
| spellingShingle | Fangzhou Yu Wen-Chiang Hong Guangyuan Li Yuxuan Li Ming Lu Yicheng Lu MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass IEEE Journal of the Electron Devices Society Negative capacitance transparent electronics thin-film transistor subthreshold swing |
| title | MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass |
| title_full | MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass |
| title_fullStr | MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass |
| title_full_unstemmed | MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass |
| title_short | MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass |
| title_sort | mgzno based negative capacitance transparent thin film transistor built on glass |
| topic | Negative capacitance transparent electronics thin-film transistor subthreshold swing |
| url | https://ieeexplore.ieee.org/document/9525131/ |
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