High-performance hysteresis-free perovskite transistors through anion engineering

High-performance hysteresis-free perovskite transistors through anion engineering

Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm2V–1S–1, which can be integrated with commercial metal oxide transistors on a single chip...

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Bibliographic Details
Main Authors: Huihui Zhu, Ao Liu, Kyu In Shim, Haksoon Jung, Taoyu Zou, Youjin Reo, Hyunjun Kim, Jeong Woo Han, Yimu Chen, Hye Yong Chu, Jun Hyung Lim, Hyung-Jun Kim, Sai Bai, Yong-Young Noh
Format: Article
Language:English
Published: Nature Portfolio 2022-04-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-022-29434-x

Internet

https://doi.org/10.1038/s41467-022-29434-x

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