Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD
In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv. FinFET) simultaneously. All the results show...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/9/1418 |