Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes
We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of <inline-formula> <tex-math notation="LaTeX">${\mathrm {365~ \text {n} \text {m} }}$ </tex-math></inline...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10054008/ |
| _version_ | 1811160955533393920 |
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| author | Alexander Herzog Simon Benkner Babak Zandi Matteo Buffolo Willem D. Van Driel Matteo Meneghini Tran Quoc Khanh |
| author_facet | Alexander Herzog Simon Benkner Babak Zandi Matteo Buffolo Willem D. Van Driel Matteo Meneghini Tran Quoc Khanh |
| author_sort | Alexander Herzog |
| collection | DOAJ |
| description | We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of <inline-formula> <tex-math notation="LaTeX">${\mathrm {365~ \text {n} \text {m} }}$ </tex-math></inline-formula>. The stress tests were carried out for a period of 8665 hours with forward currents between <inline-formula> <tex-math notation="LaTeX">${\mathrm {350~ \text {m} \text {A} }}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${\mathrm {700~ \text {m} \text {A} }}$ </tex-math></inline-formula> and junction temperatures up to 132°C. Depending on stress condition, a significant decrease in optical power could be observed, being accelerated with higher operating conditions. Devices stressed at a case temperature of 55 °C indicate a decrease in radiant flux between 10- <inline-formula> <tex-math notation="LaTeX">${\mathrm {40~\%}}$ </tex-math></inline-formula> varying with measurement current, whereas samples stressed at higher case temperatures exhibit crack formation in the silicone encapsulant accompanied by electromigration shorting the active region. The analyzed current and temperature dependency of the degradation mechanisms allows to propose a degradation model to determine the device lifetime at different operating parameters. Additional stress test data collected at different aging conditions is used to validate the model’s lifetime predictions. |
| first_indexed | 2024-04-10T06:06:28Z |
| format | Article |
| id | doaj.art-ab768cbf2079407582a02b8a143e721b |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-10T06:06:28Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-ab768cbf2079407582a02b8a143e721b2023-03-03T00:01:17ZengIEEEIEEE Access2169-35362023-01-0111199281994010.1109/ACCESS.2023.324947810054008Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting DiodesAlexander Herzog0https://orcid.org/0000-0001-6011-2635Simon Benkner1https://orcid.org/0000-0003-0391-2040Babak Zandi2https://orcid.org/0000-0002-4291-4383Matteo Buffolo3https://orcid.org/0000-0002-9255-6457Willem D. Van Driel4https://orcid.org/0000-0001-8882-2508Matteo Meneghini5https://orcid.org/0000-0003-2421-505XTran Quoc Khanh6https://orcid.org/0000-0003-1828-2459Laboratory of Adaptive Lighting Systems and Visual Processing, Technische Universität Darmstadt, Darmstadt, GermanyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universität Darmstadt, Darmstadt, GermanyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universität Darmstadt, Darmstadt, GermanyDepartment of Electrical Engineering, University of Padova, Padova, ItalyEEMCS Faculty, Delft University of Technology, CD Delft, The NetherlandsDepartment of Electrical Engineering, University of Padova, Padova, ItalyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universität Darmstadt, Darmstadt, GermanyWe report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of <inline-formula> <tex-math notation="LaTeX">${\mathrm {365~ \text {n} \text {m} }}$ </tex-math></inline-formula>. The stress tests were carried out for a period of 8665 hours with forward currents between <inline-formula> <tex-math notation="LaTeX">${\mathrm {350~ \text {m} \text {A} }}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${\mathrm {700~ \text {m} \text {A} }}$ </tex-math></inline-formula> and junction temperatures up to 132°C. Depending on stress condition, a significant decrease in optical power could be observed, being accelerated with higher operating conditions. Devices stressed at a case temperature of 55 °C indicate a decrease in radiant flux between 10- <inline-formula> <tex-math notation="LaTeX">${\mathrm {40~\%}}$ </tex-math></inline-formula> varying with measurement current, whereas samples stressed at higher case temperatures exhibit crack formation in the silicone encapsulant accompanied by electromigration shorting the active region. The analyzed current and temperature dependency of the degradation mechanisms allows to propose a degradation model to determine the device lifetime at different operating parameters. Additional stress test data collected at different aging conditions is used to validate the model’s lifetime predictions.https://ieeexplore.ieee.org/document/10054008/Light-emitting diode (LED)degradationUV-Alifetime predictionreliabilitylens cracking |
| spellingShingle | Alexander Herzog Simon Benkner Babak Zandi Matteo Buffolo Willem D. Van Driel Matteo Meneghini Tran Quoc Khanh Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes IEEE Access Light-emitting diode (LED) degradation UV-A lifetime prediction reliability lens cracking |
| title | Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes |
| title_full | Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes |
| title_fullStr | Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes |
| title_full_unstemmed | Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes |
| title_short | Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes |
| title_sort | lifetime prediction of current and temperature induced degradation in silicone encapsulated 365 nm high power light emitting diodes |
| topic | Light-emitting diode (LED) degradation UV-A lifetime prediction reliability lens cracking |
| url | https://ieeexplore.ieee.org/document/10054008/ |
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