Dielectric constant of MgO tunnel barrier with epitaxial strain
Abstract MgO tunnel barrier is a key material in spintronics. MgO-based magnetic tunnel junctions (MTJs) are widely used in magnetic sensors and magnetoresistive random access memory (MRAM) applications. The MgO tunnel barrier also plays a central role in research on the voltage control of magnetic...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-02-01
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| Series: | NPG Asia Materials |
| Online Access: | https://doi.org/10.1038/s41427-025-00585-9 |