Quantum spin Hall effect in IV-VI topological crystalline insulators

Quantum spin Hall effect in IV-VI topological crystalline insulators

We envision that the quantum spin Hall effect should be observed in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band structures, we demonstrate that in these films the energy gaps in t...

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Bibliographic Details
Main Authors: S Safaei, M Galicka, P Kacman, R Buczko
Format: Article
Language:English
Published: IOP Publishing 2015-01-01
Series:New Journal of Physics
Subjects:
topological insulators
quantum spin hall effect
thin films
band structure
surface states
Online Access:https://doi.org/10.1088/1367-2630/17/6/063041

Internet

https://doi.org/10.1088/1367-2630/17/6/063041

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