Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending on the operating temperature and gate length of the transistors. We have characterized in temperature (8–400 K) the dete...

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Bibliographic Details
Main Authors: Gaudencio Paz-Martínez, Ignacio Íñiguez-de-la-Torre, Héctor Sánchez-Martín, José Antonio Novoa-López, Virginie Hoel, Yvon Cordier, Javier Mateos, Tomás González
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Sensors
Subjects:
GaN HEMTs
RF detectors
bulk and surface traps
gate leakage
responsivity
third-quadrant conduction
Online Access:https://www.mdpi.com/1424-8220/22/4/1515

Internet

https://www.mdpi.com/1424-8220/22/4/1515

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