Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
A 16-nm-L<sub>g</sub> p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for...
Main Authors: | , , , , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-01-01
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Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/11/2/309 |