Reliable Accessibility of Intermediate Polarization States in Textured Ferroelectric Al0.66Sc0.34N Thin Film

Reliable Accessibility of Intermediate Polarization States in Textured Ferroelectric Al0.66Sc0.34N Thin Film

Abstract Ferroelectric materials are promising candidates for neuromorphic computing synaptic devices due to the nonvolatile multiplicity of spontaneous polarization. To ensure a sufficient memory window, ferroelectric materials with a large coercivity are urgently required for practical application...

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Bibliographic Details
Main Authors: Tae Yoon Lee, Myeong Seop Song, Jung Woo Cho, In Hyeok Choi, Chihwan An, Jong Seok Lee, Seung Chul Chae
Format: Article
Language:English
Published: Wiley-VCH 2024-02-01
Series:Advanced Electronic Materials
Subjects:
AlScN
ferroelectrics
multilevel
neuromorphic devices
thin films
Online Access:https://doi.org/10.1002/aelm.202300591

Internet

https://doi.org/10.1002/aelm.202300591

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