The features of the Ni-GaAs contacts formation obtained by electrolysis and their electrophysical properties
Background. Nickel contacts based on gallium arsenide are of interest from the point of view of their application in optoelectronics. The purpose of this work is to study the contact structures of Ni p-GaAs and Ni n-GaAs. The object of the study is the electrochemical contacts of nickel to crysta...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penza State University Publishing House
2022-12-01
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| Series: | Известия высших учебных заведений. Поволжский регион: Физико-математические науки |
| Subjects: |