Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H<sub>3</sub>PO<sub>4</sub> solution and Al<sub>2</sub>O<sub>3</sub> sol coating. The phosphorus and aluminum concentrations at the laser doped region w...

Full description

Bibliographic Details
Main Authors: Kaname Imokawa, Takayuki Kurashige, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Low temperature poly Si (LTPS)
thin-film-transistor (TFT)
excimer laser annealing (ELA)
laser doping
chemical solution coating
Online Access:https://ieeexplore.ieee.org/document/8918252/

Internet

https://ieeexplore.ieee.org/document/8918252/

Similar Items