Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating
We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H<sub>3</sub>PO<sub>4</sub> solution and Al<sub>2</sub>O<sub>3</sub> sol coating. The phosphorus and aluminum concentrations at the laser doped region w...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8918252/ |
| Summary: | We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H<sub>3</sub>PO<sub>4</sub> solution and Al<sub>2</sub>O<sub>3</sub> sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10<sup>19</sup> cm<sup>-3</sup> in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented. |
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| ISSN: | 2168-6734 |