Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating
We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H<sub>3</sub>PO<sub>4</sub> solution and Al<sub>2</sub>O<sub>3</sub> sol coating. The phosphorus and aluminum concentrations at the laser doped region w...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/8918252/ |
| _version_ | 1818853890641100800 |
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| author | Kaname Imokawa Takayuki Kurashige Akira Suwa Daisuke Nakamura Taizoh Sadoh Tetsuya Goto Hiroshi Ikenoue |
| author_facet | Kaname Imokawa Takayuki Kurashige Akira Suwa Daisuke Nakamura Taizoh Sadoh Tetsuya Goto Hiroshi Ikenoue |
| author_sort | Kaname Imokawa |
| collection | DOAJ |
| description | We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H<sub>3</sub>PO<sub>4</sub> solution and Al<sub>2</sub>O<sub>3</sub> sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10<sup>19</sup> cm<sup>-3</sup> in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented. |
| first_indexed | 2024-12-19T07:44:00Z |
| format | Article |
| id | doaj.art-ac1be0221a0a4e7aa2627fb923ae43bf |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-19T07:44:00Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-ac1be0221a0a4e7aa2627fb923ae43bf2022-12-21T20:30:23ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-018273210.1109/JEDS.2019.29569918918252Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution CoatingKaname Imokawa0https://orcid.org/0000-0003-0371-0369Takayuki Kurashige1Akira Suwa2Daisuke Nakamura3Taizoh Sadoh4https://orcid.org/0000-0001-6988-5597Tetsuya Goto5https://orcid.org/0000-0001-8384-0096Hiroshi Ikenoue6Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, JapanGraduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, JapanGraduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, JapanGraduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, JapanGraduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, JapanNew Industry Creation Hatchery Center, Tohoku University, Sendai, JapanGraduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, JapanWe demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H<sub>3</sub>PO<sub>4</sub> solution and Al<sub>2</sub>O<sub>3</sub> sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10<sup>19</sup> cm<sup>-3</sup> in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.https://ieeexplore.ieee.org/document/8918252/Low temperature poly Si (LTPS)thin-film-transistor (TFT)excimer laser annealing (ELA)laser dopingchemical solution coating |
| spellingShingle | Kaname Imokawa Takayuki Kurashige Akira Suwa Daisuke Nakamura Taizoh Sadoh Tetsuya Goto Hiroshi Ikenoue Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating IEEE Journal of the Electron Devices Society Low temperature poly Si (LTPS) thin-film-transistor (TFT) excimer laser annealing (ELA) laser doping chemical solution coating |
| title | Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating |
| title_full | Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating |
| title_fullStr | Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating |
| title_full_unstemmed | Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating |
| title_short | Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating |
| title_sort | fabrication of cmos invertors in si thin film transistors by laser doping using a chemical solution coating |
| topic | Low temperature poly Si (LTPS) thin-film-transistor (TFT) excimer laser annealing (ELA) laser doping chemical solution coating |
| url | https://ieeexplore.ieee.org/document/8918252/ |
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