Harnessing defects for high-performance MoS2 tunneling field-effect transistors
ABSTRACTThe two-dimensional (2D) materials-based tunneling field-effect transistors (TFETs) suffer from low driving currents. In contrast to the prevailing wisdom that defects are detrimental, we proposed to harness the ubiquitous defects in MoS2 to overcome the problem of the low on-state current i...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2023-04-01
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| Series: | Materials Research Letters |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/21663831.2022.2145921 |