Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer
In this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR) devices on a Si(001) single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and epitaxial B...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4950827 |