Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer
In this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR) devices on a Si(001) single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and epitaxial B...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2016-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4950827 |
| _version_ | 1818323421047554048 |
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| author | Jiamin Chen J. Liu Y. Sakuraba H. Sukegawa S. Li K. Hono |
| author_facet | Jiamin Chen J. Liu Y. Sakuraba H. Sukegawa S. Li K. Hono |
| author_sort | Jiamin Chen |
| collection | DOAJ |
| description | In this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR) devices on a Si(001) single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and epitaxial B2-type NiAl(001) layer was obtained. The surface roughness was further improved by depositing Ag on the NiAl layer and applying subsequent annealing process. The epitaxial CPP-GMR devices grown on the buffered Si(001) substrate present a large magnetoresistive output comparable with that of the devices grown on an MgO(001) substrate, demonstrating the possibility of epitaxial spintronic devices with a NiAl templated Si wafer for practical applications. |
| first_indexed | 2024-12-13T11:12:25Z |
| format | Article |
| id | doaj.art-ac6b8ad50ece4cb1bcf4ec61eb706ccb |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-13T11:12:25Z |
| publishDate | 2016-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-ac6b8ad50ece4cb1bcf4ec61eb706ccb2022-12-21T23:48:42ZengAIP Publishing LLCAPL Materials2166-532X2016-05-0145056104056104-710.1063/1.4950827006605APMRealization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layerJiamin Chen0J. Liu1Y. Sakuraba2H. Sukegawa3S. Li4K. Hono5Research Center for Magnetic and Spintronics Materials, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047, JapanResearch Center for Magnetic and Spintronics Materials, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047, JapanResearch Center for Magnetic and Spintronics Materials, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047, JapanResearch Center for Magnetic and Spintronics Materials, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047, JapanResearch Center for Magnetic and Spintronics Materials, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047, JapanResearch Center for Magnetic and Spintronics Materials, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047, JapanIn this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR) devices on a Si(001) single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and epitaxial B2-type NiAl(001) layer was obtained. The surface roughness was further improved by depositing Ag on the NiAl layer and applying subsequent annealing process. The epitaxial CPP-GMR devices grown on the buffered Si(001) substrate present a large magnetoresistive output comparable with that of the devices grown on an MgO(001) substrate, demonstrating the possibility of epitaxial spintronic devices with a NiAl templated Si wafer for practical applications.http://dx.doi.org/10.1063/1.4950827 |
| spellingShingle | Jiamin Chen J. Liu Y. Sakuraba H. Sukegawa S. Li K. Hono Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer APL Materials |
| title | Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer |
| title_full | Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer |
| title_fullStr | Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer |
| title_full_unstemmed | Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer |
| title_short | Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer |
| title_sort | realization of high quality epitaxial current perpendicular to plane giant magnetoresistive pseudo spin valves on si 001 wafer using nial buffer layer |
| url | http://dx.doi.org/10.1063/1.4950827 |
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